The use of an undesirably low T A in the processing of MOS precursors leads to the presence of residual carbon impurities and a lower degree of domain ordering in the resulting films. However, the annealing temperature ( T A) utilized in the synthesis of MOS layers tends to be determined by the softening T of the supporting substrate. Furthermore, when compared to polycrystalline silicon, the lower processing cost associated with MOS thin films has made these materials more attractive for large-area display applications.Īmong the various methods for preparing MOS films, solution-based approaches are particularly appealing due to their simplicity and the ease with which stoichiometry can be controlled 4, 5, 6, 7, 8. Such interest can be attributed to the reasonably high carrier mobility, stability, and large-area uniformity of these compounds. Metal oxide semiconductors ( MOSs) such as indium gallium zinc oxide ( IGZO), indium zinc oxide ( IZO), zinc tin oxide ( ZTO), and indium oxide ( In 2 O 3) have been extensively studied for use as active channel materials in thin film transistors (TFTs) for flat panel displays 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14. Finally, an In 2 O 3 film doped with 13.5 mol% Li + and annealed at 250 ☌ for 1 h exhibited the highest electron mobility of 60 cm 2 V −1 s −1 and an on/off current ratio above 10 8 when utilized in a thin film transistor. These phases were subsequently transformed into crystalline In 2 O 3 nanostructures after thermal dehydration and oxidation. Upon annealing the Li-assisted precursor films below 200 ☌, metastable indium hydroxide and/or indium oxyhydroxide phases were formed. Different In oxidation states were observed in the Li-doped films, and the development of such states was significantly affected by both temperature and the mol% of Li cations, /( + ), in the precursor solutions. It was found that the Li-assisted In precursor films on ZrO 2 dielectrics could form crystalline structures even at processing temperatures ( T) below 200 ☌. Lithium ( Li)-assisted indium oxide ( In 2 O 3) thin films with ordered structures were prepared on solution-processed zirconium oxide ( ZrO 2) gate dielectrics by spin-casting and thermally annealing hydrated indium nitrate solutions with different Li nitrate loadings.
0 kommentar(er)
